Large area plasma source technology
Neutral beam and atomic layer etching technology
High selective etching of STT-MRAM materials
Nano scale high aspect ratio contact hole etching
Atmospheric pressure plasma technology
Graphene electronics
Development of sub 10 nm 3-D
Education
Hanyang University: B.S. in Metallurgical Engineering (1977-1981)
Seoul National University: M.S. in Materials Engineering (1981-1983)
University of Illinois at Urbana-Champaign, USA: Ph.D. in Electronic Materials Engineering (1984-1989)
Experience
University of Illinois at Urbana-Champaign, Research Assistant (1984-1989)
Institute of Semiconductors in Tektronix Inc. USA, Process Engineer (1989-1991)
Institute of Semiconductors in TDK Corporation (SSI Inc.), USA, Senior Engineer (1991-1992)
School of Advanced Materials Science and Engineering, SKKU, Professor (1992-Present)
Journal Articles
(2023)
Three-Dimensional Surface Treatment of MoS2 Using BCl3 Plasma-Derived Radicals.
ACS APPLIED MATERIALS & INTERFACES.
15,
39
(2023)
Surface hardening of extreme ultraviolet(EUV) photoresist by CS2 plasma for highly selective and low damage patterning.
APPLIED SURFACE SCIENCE.
629,
157439
(2023)
Highly selective etching of SiNx over SiO2 using ClF3/Cl2 remote plasma.
NANOTECHNOLOGY.
34,
46
(2023)
Characterization of SiO2 Plasma Etching with Perfluorocarbon (C4F8 and C6F6) and Hydrofluorocarbon (CHF3 and C4H2F6) Precursors for the Greenhouse Gas Emissions Reduction.
MATERIALS.
16,
16
(2023)
Characteristics of high aspect ratio SiO2 etching using C4H2F6 isomers.
APPLIED SURFACE SCIENCE.
639,
158190
(2023)
Selective isotropic etching of SiO2 over Si3N4 using NF3/H2 remote plasma and methanol vapor.
SCIENTIFIC REPORTS.
13,
11599
(2023)
Asynchronously Pulsed Plasma for High Aspect Ratio Nanoscale Si Trench Etch Process.
ACS APPLIED NANO MATERIALS.
xxxx,
xxx
(2023)
Plasma Enhanced Atomic Layer Deposition of Silicon Nitride for Two Different Aminosilane Precursors Using Very High Frequency (162 MHz) Plasma Source.
ACS APPLIED MATERIALS & INTERFACES.
XXXX,
XXX
(2023)
Etched characteristics of nanoscale TiO2 using C4F8-based and BCl3-based gases.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.
164,
107617
(2023)
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process.
NATURE NANOTECHNOLOGY.
18,
5
(2023)
Effect of various pulse plasma techniques on TiO2 etching for metalens formation.
VACUUM.
212,
111978
(2023)
Study on etch characteristics of magnetic tunnel junction materials using rf-biased H2 / NH3 reactive ion beam.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A.
41,
3
(2023)
Indium tin oxide etch characteristics using CxH2x+2(x=1,2,3)/Ar.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.
160,
-
(2023)
Non-epitaxial single-crystal 2D material growth by geometric confinement.
NATURE.
614,
-
(2022)
Atomic layer etching of Sn by surface modification with H and Cl radicals.
NANOTECHNOLOGY.
34,
3
(2022)
Low temperature silicon nitride grown by very high frequency (VHF,162 MHz) plasma enhanced atomic layer deposition with floating multi-tile electrode.
SURFACES AND INTERFACES.
33,
102219
(2022)
Surface Engineering of TMDs by Modulation of Top Chalcogen Atoms: For Electrical Contact and Chemical Doping.
ACS APPLIED ELECTRONIC MATERIALS.
X,
X
(2022)
Etch Characteristics of Low-K Materials Using CF3I/C4F8/Ar/O2 Inductively Coupled Plasmas.
SCIENCE OF ADVANCED MATERIALS.
14,
-
(2022)
Effect of Hydrofluorocarbon Structure of C3H2F6 Isomers on High Aspect Ratio Etching of Silicon Oxide.
APPLIED SURFACE SCIENCE.
600,
30
(2022)
Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation.
APPLIED SURFACE SCIENCE.
596,
Publications
(2012)
소재기술백서 2011.
라이온문화사.
Lead author
(2011)
Plasma Processing of Nanomaterials -CHPATER 7 Atmospheric Plasmas for Carbon Nanotubes (CNTs).
CRC Press Taylor & Francis Group.
Co-author
(2011)
Handbook of Visual Display Technology.
Springer Science+Business Media.
Lead author
(2005)
플라즈마 식각기술 (Plasma Etching Technology).
문운당.
Solo
Patent/Intellectual Property
반도체 식각 공정.
10-2019-0137982.
20201006.
KOREA, REPUBLIC OF
주파수 중첩 플라즈마 소스 디자인.
16/275,523.
20200922.
UNITED STATES
원자층 식각 장치.
10-2018-0109632.
20200703.
KOREA, REPUBLIC OF
그래핀을 이용한 금속 방열판 및 제조방법.
10-2018-0048525.
20200407.
KOREA, REPUBLIC OF
원자층식각 공정을 이용한 전이금속 디칼코게나이드 화합물 기반 나노 헤테로 접합 소자.
16/050,063.
20200317.
UNITED STATES
비휘발성 메모리 소자 및 이의 제조방법.
10-2017-0057884.
20190801.
KOREA, REPUBLIC OF
이온빔 식각 장치.
10-2017-0095219.
20190110.
KOREA, REPUBLIC OF
플라즈마 소스 및 이를 이용한 플라즈마 발생장치.
10-2017-0134023.
20181219.
KOREA, REPUBLIC OF
플라즈마 프레스 장치 및 이를 이용한 접합방법(PLASMA PRESSING DEVICE AND JUNCTION METHOD USING THE SAME).
10-2017-0054935.
20181031.
KOREA, REPUBLIC OF
플라즈마 발생장치 및 이를 포함하는 기판 처리 장치.
10-2018-0018622.
20181029.
KOREA, REPUBLIC OF
반도체 소자, 광전 소자, 및 전이금속 디칼코게나이드 박막의 제조 방법.
10-2017-0097527.
20180424.
KOREA, REPUBLIC OF
블록 공중합체의 표면 경화 방법.
10-2015-0180844.
20180323.
KOREA, REPUBLIC OF
프리-도핑을 이용한 그래핀의 제조 방법 및 이로부터 제조된 다층 그래핀(METHOD FOR MANUFACTURING GRAPHENE USING PRE-DOPING AND MULTY-LAYER GRAPHENE MANUFACTURED BY THE SAME).
10-2015-0158376.
20171110.
KOREA, REPUBLIC OF
접촉저항을 이용한 나노용접 방법(NANO-WELDING METHOD USING RESISTIVE HEATING).
10-2015-0119461.
20170920.
KOREA, REPUBLIC OF
그라핀 원자층 식각 공정 기술
METHOD FOR ETCHING ATOMIC LAYER OF GRAPHENE.
14/161,050.
20160126.
UNITED STATES
플라즈마의 생성영역을 조절할 수 있는 대면적 플라즈마 발생장치{LARGE
SCALE PLASMA GENERATING APPARATUS FOR ADJUSTING PLASMA GENERATION REGION}.
10-2014-0095984.
20151109.
KOREA, REPUBLIC OF
스퍼터율 향상을 위한 유도 결합형 플라즈마 소스 및 이를 사용하는 스퍼터링 장치.
10-2013-0143834.
20150923.
KOREA, REPUBLIC OF
Mild beam 을 이용한 저손상 플라즈마 처리방법
저손상 플라즈마 처리 장치{LOW-DAMAGE PLASMA PROCESSING APPARATUS}.
10-2014-0134751.
20150818.
KOREA, REPUBLIC OF
반응성 이온빔 펄스를 이용한 MRAM 물질 식각 방법{METHOD FOR ETCHING
MRAM MATERIAL USING REACTIVE ION BEAM PULSE}.
10-2014-0041935.
20150611.
KOREA, REPUBLIC OF
멀티전극을 포함하는 플라스마 발생 장치 및 플라스마 발생 방법.
10-2012-0119405.
20141112.
KOREA, REPUBLIC OF
Conference Paper
(2022)
VHF Plasma Enhanced Atomic Layer Deposition of SiNx.
PACSURF 2022.
UNITED STATES
(2022)
Effect of Bias Pulsed VHF Plasma for Gap-Filling of Silicon Dioxide in High Aspect Ratio Structures.
DPS 2022.
JAPAN
(2022)
Effect of CxHyFz Chemical Structure on the Etch Characteristics of High Aspect Ratio Contact.
DPS 2022.
JAPAN
(2022)
Effect of CxHyFz Isomer Branch Structure on High Aspect Ratio Etching.
DPS 2022.
JAPAN
(2022)
Effect of Various Pulse Plasma Techniques on TiO2 Etching.
DPS 2022.
JAPAN
(2022)
Atomic Layer Etching of Sn Using H2/Cl2 RadicaL.
KISM 2022.
KOREA, REPUBLIC OF
(2022)
Atomic Layer Modification/Etching of 2-Dimensional MoS2 Semiconductor.
KISM 2022.
KOREA, REPUBLIC OF
(2022)
Characteristics of Silicon Nitride Deposited by Very High Frequency (162 MHz)-Plasma Enhanced Atomic Layer Deposition Using Di(isopropylamino)silane and N2 Plasma.
KISM 2022.
KOREA, REPUBLIC OF
(2022)
Cyclic Isotropic Etching of PdSe2.
KISM 2022.
KOREA, REPUBLIC OF
(2022)
Etch Characteristics of Magnetic Tunnel Junction Materials Using Reactive Ion Beam Etching without a Neutralize.
KISM 2022.
KOREA, REPUBLIC OF
(2022)
High Aspect Ratio Contact Etching Using CxH2F6.
KISM 2022.
KOREA, REPUBLIC OF
(2022)
Improved Aspect Ratio Dependent Etching of Nanoscale Si Trench by Using Asynchronously Pulsed Plasma.
KISM 2022.
KOREA, REPUBLIC OF
(2022)
Characteristics of Low Temperature Deposited SiO2 Film based on Very High Frequency Plasma Enhanced Atomic Layer Deposition with Substrate Bias.
AVS 68.
UNITED STATES
(2022)
Sio2 Bottom-Up Trench Fill of a High Aspect Ratio Hole by Plasma Enhanced Atomic Layer Deposition Using a Very High Frequency Plasmas and Inhibitor Surface Treatment.
AVS 68.
UNITED STATES
(2022)
Effect of C4H2F6 Isomers on the Etch Characteristics of SiO2.
AVS 68.
UNITED STATES
(2022)
Reduction of EUV Resist Damage by using Neutral Beam Etching.
AVS 68.
UNITED STATES
(2022)
Selective Cyclic Etching of Silicon Oxide Over Silicon Nitride Using NF3/H2 Remote Plasma and NH3.
AVS 68.
UNITED STATES
(2022)
Selective Etching of Silicon Nitride with Remote ClF3/H2 Plasma.
AVS 68.
UNITED STATES
(2022)
Control of Radical/Ion Flux Ratio of Reactive Ion Beam Etching (RIBE) using Dual Exhaust system.
IVC 22.
JAPAN
(2022)
Graphene Layer Control on SrTiO3 for High-Quality Epilayer Growth.
IVC 22.
JAPAN